2.1 INTRODUCTION
p-n junctions are of great importance both in modern electronic applications and in understanding other semiconductor devices. The p-n junction theory serves as the foundation of the physics of semiconductor. The basic theory of current-voltage characteristics of p-n junctions was established by Schockley [1, 2]. This theory was extended by Sah, Noyce, and Schockley [3], and by Moll [4].
The basic equations presented in Chaper 1 are used to develop the ideal static and dynamic characteristic of p-n junctions. Departures from the ideal characteristics due to generation and recombination in the depletion layer, to high injection, and to series resistance effects are then discussed. Junction breakdown, especially that due to avalanche multiplication, is considered in detail, after which transient behavior and noise performance in p-n junctions are presented.
A p-n junction is a two-terminal device. Depending on the doping profile, device geometry, and biasing condition, a p-n junction can perform various terminal functions which are considered briefly in Section 2.6. The chapter closes with a discussion of an important group of devices--the heterojunctions, which are junctions formed between dissimilar semiconductors (e.g., n-type GaAs on p-type AlGaAs).
REFERENCES
[1] W. Shockley, “The Theory of p-n Junctions in Semiconductors and p-n Junction Transistors,” Bell Syst. Tech. J., 28,435 (1949). [LINK] [PDF]
[2] W. Shockley, Electrons and Holes in Semiconductors, D. Van Nostrand, Princeton, New Jersey, 1950.[PDF]
[3] C. T. Sah, R. N. Noyce, and W. Shockley, “Carrier Generation and Recombination in p-n Junction andp-n Junction Characteristics,” Proc. IRE, 45, 1228(1957). [LINK] [PDF]
[4] J. L. Moll, “The Evolution of the Theory of the Current-Voltage Characteristics of p-n Junctions,” Proc. IRE, 46, 1076(1958). [LINK] [PDF]